Forming phase change memories

Abstract

Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately heat the material to induce the phase changes. The heater may be coupled to an appropriate conductor.

Claims

What is claimed is: 1 . A method comprising: forming a planar phase change material layer; forming a phase change material heater in thermal contact with said planar phase change material layer; and coupling said heater to a conductor. 2 . The method of claim 1 including forming phase change material over and substantially parallel to a semiconductor substrate. 3 . The method of claim 1 including forming said phase change material layer over an insulator. 4 . The method of claim 3 including forming a passage through said insulator. 5 . The method of claim 4 including forming said heater in said passage. 6 . The method of claim 5 including forming said conductor under said heater in said passage. 7 . The method of claim 4 including using electron beam lithography to form said passage. 8 . The method of claim 4 including forming a sidewall spacer in said passage. 9 . The method of claim 6 including applying material to form said conductor in said passage. 10 . The method of claim 9 including removing a portion of said material to form a space. 11 . The method of claim 10 including forming said heater in said space. 12 . The method of claim 1 including forming a conductor that is of substantially the same width as said heater. 13 . The method of claim 1 including forming a conductor that is wider than said heater. 14 . The method of claim 13 including forming said conductor, covering said conductor with an insulator, and forming a hole in said insulator. 15 . The method of claim 14 including forming said heater in said hole. 16 . The method of claim 15 including forming said hole using electron beam lithography. 17 . The method of claim 15 including forming a sidewall spacer in said hole. 18 . The method of claim 1 including forming a cup-shaped conductor. 19 . The method of claim 18 including forming a ring-shaped heater. 20 . The method of claim 19 including forming a first insulator, forming an opening in said first insulator, and forming a second insulator on the wall of said opening. 21 . The method of claim 20 including covering said second insulator with a conductive material to form said conductor with a central passage. 22 . The method of claim 21 including filling said passage with an insulator. 23 . The method of claim 22 including removing a portion of said conductive material to form a ring-shaped space. 24 . The method of claim 23 including filling said space with a material to form said heater. 25 . The method of claim 1 including forming said phase change material layer over an insulator that has a thermal conductivity at least four times lower than oxide. 26 . The method of claim 25 including forming said phase change material layer over a xerogel. 27 . The method of claim 1 including forming a planar layer between said heater and said phase change material layer to heat said phase change material layer by providing a voltage drop. 28 . The method of claim 27 including forming said planar layer of a material including carbon. 29 . A phase change memory comprising: a planar phase change material; a heater under said phase change material; and a conductor coupled to said heater. 30 . The memory of claim 29 including a semiconductor substrate, said phase change material arranged over said substrate and extending parallel to said substrate. 31 . The memory of claim 30 including an insulator between said substrate and said material. 32 . The memory of claim 31 including a passage extending through said insulator. 33 . The memory of claim 32 wherein said heater is in said passage. 34 . The memory of claim 33 wherein said conductor is in said passage under said heater and electrically coupled to said heater. 35 . The memory of claim 34 wherein said passage includes a sidewall spacer. 36 . The memory of claim 29 wherein said conductor has substantially the same width as said heater. 37 . The memory of claim 29 wherein said conductor is cup-shaped with a central opening. 38 . The memory of claim 37 including an insulator in said opening. 39 . The memory of claim 38 wherein said heater is ring-shaped. 40 . The memory of claim 29 including forming said heater in an insulating layer that has a thermal conductivity at least four times less than oxide. 41 . The memory of claim 40 wherein said insulating layer includes a xerogel. 42 . The memory of claim 29 wherein said conductor is wider than said heater. 43 . The memory of claim 29 including a carbon containing layer between said phase change material and said heater. 44 . A phase change memory comprising: a substrate; an insulator over said substrate; a passage through said insulator; a planar phase change material layer, over said insulator, parallel to said substrate; a heater in said passage; and a conductor in said passage between said substrate and said heater. 45 . The memory of claim 44 wherein said conductor is elongated. 46 . The memory of claim 44 wherein said conductor is cup-shaped. 47 . The memory of claim 46 wherein said heater is ring-shaped. 48 . The memory of claim 44 including a xerogel. 49 . The memory of claim 44 including a sidewall spacer in said passage. 50 . The memory of claim 44 wherein said conductor is wider than said heater. 51 . A system comprising: a phase change memory including a planar phase change layer over a heater and a conductor, said conductor electrically coupled to said heater and said heater physically coupled to said phase change layer; and a digital signal processor coupled to said memory. 52 . The system of claim 51 wherein said planar phase change layer is over a carbon containing layer. 53 . The system of claim 52 wherein said carbon containing layer is planar.
BACKGROUND [0001] This invention relates generally to electronic memories and particularly to electronic memories that use phase change material. [0002] Phase change materials may exhibit at least two different states. The states may be called the amorphous and crystalline states. Transitions between these states may be selectively initiated. The states may be distinguished because the amorphous state generally exhibits higher resistivity than the crystalline state. The amorphous state involves a more disordered atomic structure. Generally any phase change material may be utilized. In some embodiments, however, thin-film chalcogenide alloy materials may be particularly suitable. [0003] The phase change may be induced reversibly. Therefore, the memory may change from the amorphous to the crystalline state and may revert back to the amorphous state thereafter, or vice versa, in response to temperature changes. In effect, each memory cell may be thought of as a programmable resistor, which reversibly changes between higher and lower resistance states. The phase change may be induced by resistive heating. [0004] Existing phase change memories may exhibit various disadvantages. Thus, there is a need for better ways to form phase change memories. BRIEF DESCRIPTION OF THE DRAWINGS [0005] [0005]FIG. 1 is an enlarged, partial cross-sectional view of one embodiment of the present invention; [0006] [0006]FIG. 2 is an enlarged, partial cross-sectional view of the embodiment shown in FIG. 1 in the course of fabrication; [0007] [0007]FIG. 3 is an enlarged, partial cross-sectional view corresponding to FIG. 2 at a subsequent stage; [0008] [0008]FIG. 4 is an enlarged cross-sectional view at a subsequent stage; [0009] [0009]FIG. 5 is an enlarged, partial cross-sectional view of another embodiment of the present invention at an early stage of manufacture; [0010] [0010]FIG. 6 is an enlarged, partial cross-sectional view at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0011] [0011]FIG. 7 is an enlarged, partial cross-sectional view at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0012] [0012]FIG. 8 is an enlarged, partial cross-sectional view of the embodiment shown in FIG. 7 at a subsequent stage of fabrication in accordance with one embodiment of the present invention; [0013] [0013]FIG. 9 is an enlarged, partial cross-sectional view of still another embodiment of the present invention; [0014] [0014]FIG. 10 is an enlarged, partial cross-sectional view of an early stage of manufacturing of the embodiment shown in FIG. 9 in accordance with one embodiment of the present invention; [0015] [0015]FIG. 11 is an enlarged, partial cross-sectional view of the embodiment shown in FIG. 10 in accordance with one embodiment of the present invention at a subsequent stage of manufacture; [0016] [0016]FIG. 12 is an enlarged, partial cross-sectional view at a subsequent stage of manufacture in accordance with still another embodiment of the present invention; [0017] [0017]FIG. 13 is an enlarged, partial cross-sectional view of still another stage of manufacture in accordance with one embodiment of the present invention; [0018] [0018]FIG. 14 is an enlarged, partial cross-sectional view of still a later stage of manufacture in accordance with one embodiment of the present invention; [0019] [0019]FIG. 15 is an enlarged, partial cross-sectional view of still a later stage of manufacture in accordance with one embodiment of the present invention; [0020] [0020]FIG. 16 is an enlarged, partial cross-sectional view at an early stage of manufacture in accordance with another technique for forming a structure shown in FIG. 9 in accordance with one embodiment of the present invention; [0021] [0021]FIG. 17 is an enlarged, partial cross-sectional view of the embodiment shown in FIG. 16 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0022] [0022]FIG. 18 is an enlarged, partial cross-sectional view of still another embodiment of the present invention; [0023] [0023]FIG. 19 is an enlarged, partial cross-sectional view of the embodiment shown in FIG. 18 at an early stage of manufacture; [0024] [0024]FIG. 20 is an enlarged, partial cross-sectional view at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0025] [0025]FIG. 21 is an enlarged, partial cross-sectional view of the embodiment shown in FIG. 20 at a subsequent stage of manufacture in accordance with one embodiment of the present invention; [0026] [0026]FIG. 22 is an enlarged, partial cross-sectional view at a subsequent stage in accordance with one embodiment of the present invention; [0027] [0027]FIG. 23 is an enlarged, partial cross-sectional view at a subsequent stage in accordance with one embodiment of the present invention; [0028] [0028]FIG. 24 is an enlarged, partial cross-sectional view at a subsequent stage in accordance with one embodiment of the present invention; [0029] [0029]FIG. 25 is an enlarged, partial cross-sectional view of still another embodiment of the present invention; and [0030] [0030]FIG. 26 is a schematic depiction of a system in one embodiment of the present invention. DETAILED DESCRIPTION [0031] Referring to FIG. 1, the phase change memory 10 may include a upper electrode 12 on top of a phase change material layer. In one embodiment of the present invention, the layer 14 includes a chalcogenide material. Examples of phase change memory material include, but are not limited to, chalcogenide element(s) compositions of the class of tellurium-germanium-antimony (TexGeySbz) material or GeSbTe alloys, although the scope of the present invention is not limited to just these. Alternatively, another phase change material may be used whose electrical properties (e.g., resistance, capacitance, etc.) may be changed through the application of energy such as, for example, light, heat, or electrical current. The layer 14 is substantially planar in one embodiment of the present invention. [0032] A heater 18 may be formed essentially beneath the layer 14 . The heater 18 may be formed of titanium silicon nitride, tantalum nitride, or other resistive heating materials. The heater 18 may include a resistive material that generates resistive heating. [0033] A conductor 20 extends through an electrical insulator 16 to contact the heater 18 and to provide current for the heater 18 . Any electrically insulating material may be used. The insulator 16 may be located over a semiconductor substrate 11 such that the layer 14 is parallel to the substrate 11 and perpendicular to the conductor 20 . [0034] In some embodiments, the planar nature of the phase change material stack may improve step coverage, improve interface cleanness, add options for better thermal insulation, and generate more reproducible device performance. [0035] Referring to FIG. 2, in accordance with one process for forming the structure shown in FIG. 1, initially, a glue layer 24 may be deposited on top of an insulator 16 over a substrate 11 . The glue layer 24 may improve the adhesion of the layer 14 to the insulator 16 . An example of a glue layer is a polysilicon layer. A resist 22 may be formed over the layer 24 . [0036] In accordance with one embodiment of the present invention, an electron beam patterning technique may be utilized to form the pattern 26 in the resist 22 . The use of the electron beam patterning may result in smaller critical dimensions being transferred to the resist 22 . The pattern 26 and the resist 22 may be utilized to form an aperture 28 which extends through the resist 22 and ultimately acts as an etching mask for etching through the glue layer 24 and the insulator 16 as shown in FIG. 3. [0037] In other embodiments, other techniques to form openings may be used including phase shift masking, chromeless phase shift masking, or conventional lithography with a spacer. [0038] Referring to FIG. 4, the lower portion of the aperture 28 may be filled with a conductive material 30 , such as tungsten, aluminum, or copper, as a few examples. The conductive material 30 may then be dipped or etched (wet or dry) back to reduce the height of the conductive material 30 . Thereupon, another conductive material 32 may be deposited. This conductive material 32 may, for example, be any of the heater materials described previously including titanium silicon nitride or the material 32 may be titanium aluminum nitride, or tantalum nitride. Thereafter, a chemical mechanical polishing (CMP) step may be utilized to planarize the upper surface of the structure. [0039] Turning next to FIG. 5, another technique for forming the structure shown in FIG. 1 begins by forming an appropriately sized pore 36 in an insulator 16 over a suitable substrate (not shown). In this example, conventional lithography may be utilized. An appropriate pattern may be formed through the glue layer 24 and the insulator 16 to etch an appropriate pore 36 . The pore 36 may then be coated with a sidewall spacer material 34 which may be any suitable material including oxide and nitride. The sidewall spacer material 34 reduces the size of the opening 36 and compensates for the limitations of the lithography. [0040] The pore 36 may then be filled with a conductive material 38 , such as tungsten, as shown in FIG. 6. The conductive material 38 may then be dipped or etched (wet or dry) back to create the depression 40 as shown in FIG. 7. The dipped or etched back depression 40 may then be filled with a second conductive material 42 such as titanium silicon nitride, as indicated in FIG. 8. The heater 18 (FIG. 1) may comprise the material 42 over a conductor 20 (FIG. 1) comprising the material 38 . [0041] Referring to FIG. 9, in accordance with still another embodiment of the present invention, a phase change memory 10 a may include an upper electrode 12 over a phase change material layer 14 that, again, is in a planar configuration. A heater 46 is arranged under the phase change material layer 14 . The heater 46 may be defined in an insulator 44 . The heater 46 is coupled to a conductor 48 defined in an insulator 16 . [0042] Referring to FIG. 10, in accordance with one embodiment for forming the structure shown in FIG. 9, initially the conductive material 48 is defined within a pore within an insulator 16 using conventional techniques. The insulator 16 may then be covered with an adhesion promotion layer or glue layer 52 and an insulator 50 . [0043] The insulator 50 may then be patterned to form the opening 54 , as shown in FIG. 11, using any appropriate lithography technology. While an embodiment is provided in which conventional lithography is utilized, the opening 54 may also be formed using electron beam lithography or phase shift masking, as two additional examples. With electron beam lithography or phase shift masking, a sidewall spacer may be unnecessary in some situations. [0044] Referring to FIG. 12, in accordance with an embodiment in which conventional lithography is utilized, the opening 54 may be coated with a sidewall spacer material 56 . The sidewall spacer 58 may be formed, as shown in FIG. 13, using an anisotropic etching technique. [0045] Using the sidewall spacer 58 as a mask, the glue layer 52 may be etched through to the conductive material 48 as shown in FIG. 14. Then, as shown in FIG. 15, the heater material 46 may be deposited in the remaining opening 60 . [0046] Turning next to FIG. 16, in accordance with another technique for forming the memory 10 a , a pair of layers 62 and 64 may have an aperture 60 transferred to those layers. In one embodiment, the aperture 60 is transferred using an electron beam lithography technique. The aperture 60 communicates with a conductive material layer 48 formed within an insulator 16 . Thereafter, a heater material 62 may be formed in the aperture 60 , as shown in FIG. 17, to electrically couple to the conductive material 48 . A suitable phase change material layer may be built up over the heater 62 and an upper electrode may be added as described previously. [0047] Moving next to FIG. 18, a phase change memory 10 b may include an upper electrode 12 over a phase change material layer 14 . A ring shaped heater 78 may be positioned underneath the layer 14 . The heater 78 may be in communication with a cup-shaped conductive material 70 defined within an insulator 16 . [0048] In accordance with one embodiment for forming a structure shown in FIG. 18, initially, insulating sidewall spacers 66 may be formed, as described previously, within an aperture 68 in an insulator 16 over a suitable semiconductor substrate as shown in FIG. 19. [0049] Moving to FIG. 20, the opening 68 , shown in FIG. 19, may be covered with a conductive material 70 . The conductive material 70 may be in turned filled with a fill material 72 , such as insulator, as shown in FIG. 21. [0050] The structure shown in FIG. 21 may be planarized to achieve the structure shown in FIG. 22. Next, the conductive material 70 may be dipped or etched back to produce the ring-shaped dip 76 as shown in FIG. 23. The dip 76 may then be filled with a heater material 78 , as shown in FIG. 24, to produce the ring-shaped heater 66 coupled to the cup-shaped conductive material 70 . [0051] Turning to FIG. 25, the phase change memory 10 c may include an upper electrode 12 over a phase change material layer 14 . A heater 18 may be positioned under the layer 14 within a glue layer 79 and a thermal insulating layer 80 . The layer 80 may overlie an insulator 82 which has a pore defining a conductive material 20 as described previously. [0052] The thermal insulative layer 80 provides better thermal insulation than other insulating materials, such as oxide. The layer 80 may be used in any of the embodiments described previously. The layer 80 may have four or more times lower thermal conductivity than oxide in one embodiment. For example, the layer 80 may be xerogel or organic polymers. [0053] A xerogel is a gel which has the liquid removed from its pores. A xerogel results from a super critical drying process. Thus, a xerogel is a gel dried at temperatures close to room temperature and under atmospheric pressure. The xerogel is the result of gentle drying to avoid cracking associated with the very low permeability of the solid network. The xerogel may have ten or more times lower thermal conductivity than oxide. [0054] In some embodiments, the structures described herein may reduce the processing steps and critical mask layers required for conventional process flows. These flows may enable the use of optimum materials in the right place for optimal thermal efficiency in some embodiments. Thus, some embodiments of the present invention may exhibit one or more of the following properties: lower costs through fewer masking processes, and better performance through less wasted heat in thermal coupling. [0055] A processor-based system 84 , shown in FIG. 26, may include a processor 86 that may, for example, be a digital signal processor or a general purpose processor. The processor 86 may be coupled by a bus 88 to a wireless interface 90 , in a wireless embodiment, and the phase change memory 10 which may be, for example, any of the embodiments described above. However, the present invention is not in any way limited to wireless applications. [0056] While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (4)

    Publication numberPublication dateAssigneeTitle
    US-6339544-B1January 15, 2002Intel CorporationMethod to enhance performance of thermal resistor device
    US-6545287-B2April 08, 2003Intel CorporationUsing selective deposition to form phase-change memory cells
    US-6566700-B2May 20, 2003Ovonyx, Inc.Carbon-containing interfacial layer for phase-change memory
    US-6764894-B2July 20, 2004Ovonyx, Inc.Elevated pore phase-change memory

NO-Patent Citations (0)

    Title

Cited By (61)

    Publication numberPublication dateAssigneeTitle
    US-8216862-B2July 10, 2012Sandisk 3D LlcForming and training processes for resistance-change memory cell
    US-8497182-B2July 30, 2013Macronix International Co., Ltd.Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
    US-2009026432-A1January 29, 2009Taiwan Semiconductor Manufacturing Co., Ltd.Method and structure for uniform contact area between heater and phase change material in pcram device
    US-7817464-B2October 19, 2010Samsung Electronics Co., Ltd.Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the same
    US-8766344-B2July 01, 2014Micron Technology, Inc.Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
    US-8158965-B2April 17, 2012Macronix International Co., Ltd.Heating center PCRAM structure and methods for making
    US-2008064198-A1March 13, 2008Wolodymyr Czubatyj, Tyler Lowrey, Sergey KostylevChalcogenide semiconductor memory device with insulating dielectric
    US-8395935-B2March 12, 2013Macronix International Co., Ltd.Cross-point self-aligned reduced cell size phase change memory
    US-2015188050-A1July 02, 2015Micron Technology, Inc.Dual resistance heater for phase change devices and manufacturing method thereof
    US-9793323-B1October 17, 2017Macronix International Co., Ltd., International Business Machines CorporationPhase change memory with high endurance
    US-2010270593-A1October 28, 2010Macronix International Co., Ltd.Integrated circuit 3d memory array and manufacturing method
    US-8143612-B2March 27, 2012Marconix International Co., Ltd., International Business MachinesPhase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
    US-9082954-B2July 14, 2015Macronix International Co., Ltd., International Business MachinesPCRAM with current flowing laterally relative to axis defined by electrodes
    US-8729521-B2May 20, 2014Macronix International Co., Ltd., International Business Machines CorporationSelf aligned fin-type programmable memory cell
    US-7439536-B2October 21, 2008Fabio Pellizzer, Enrico Varesi, Agostino PirovanoPhase change memory cell with tubular heater and manufacturing method thereof
    US-8310864-B2November 13, 2012Macronix International Co., Ltd., International Business Machines CorporationSelf-aligned bit line under word line memory array
    US-8981330-B2March 17, 2015Macronix International Co., Ltd.Thermally-confined spacer PCM cells
    US-2010019216-A1January 28, 2010Samsung Electronics Co., Ltd.Multi-layer phase-changeable memory devices
    US-9236568-B2January 12, 2016Macronix International Co., Ltd.Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
    US-8829646-B2September 09, 2014Macronix International Co., Ltd.Integrated circuit 3D memory array and manufacturing method
    US-7462900-B2December 09, 2008Samsung Electronics Co., Ltd.Phase changeable memory devices including nitrogen and/or silicon
    EP-1710807-A1October 11, 2006STMicroelectronics S.r.l.Phase change memory cell with tubular heater and manufacturing method thereof
    US-8178386-B2May 15, 2012Macronix International Co., Ltd., International Business Machines CorporationPhase change memory cell array with self-converged bottom electrode and method for manufacturing
    US-2008272355-A1November 06, 2008Samsung Electronics Co., Ltd.Phase change memory device and method for forming the same
    WO-2006034953-A1April 06, 2006Infineon Technologies AgResistive memory element with heater
    US-2005002227-A1January 06, 2005Horii Hideki, Bong-Jin Kuh, Ha Yong-Ho, Park Jeong-Hee, Ji-Hye YiPhase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
    US-9559113-B2January 31, 2017Macronix International Co., Ltd.SSL/GSL gate oxide in 3D vertical channel NAND
    US-8916414-B2December 23, 2014Macronix International Co., Ltd.Method for making memory cell by melting phase change material in confined space
    US-7501307-B2March 10, 2009Samsung Electronics Co., Ltd.Method of fabricating semiconductor memory device
    US-2011229990-A1September 22, 2011Franz Kreupl, Sekar Deepak CForming and training processes for resistance-change memory cell
    US-8853047-B2October 07, 2014Macronix International Co., Ltd., International Business Machines CorporationSelf aligned fin-type programmable memory cell
    US-2007148933-A1June 28, 2007Samsung Electronics Co., Ltd.Nonvolatile memory device and method of fabricating the same
    US-8080440-B2December 20, 2011Macronix International Co., Ltd.Resistor random access memory cell with L-shaped electrode
    US-2009072216-A1March 19, 2009Macronix International Co., Ltd., International Business Machines CorporationPhase change memory cell array with self-converged bottom electrode and method for manufacturing
    US-2010207095-A1August 19, 2010Macronix International Co., Ltd.Resistor random access memory cell with l-shaped electrode
    US-2007272950-A1November 29, 2007Samsung Electronics Co., Ltd.Semiconductor memory devices and methods of fabricating the same
    US-9231103-B2January 05, 2016Micron Technology, Inc.Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
    US-7943918-B2May 17, 2011Samsung Electronics Co., Ltd.Multi-layer phase-changeable memory devices
    US-2007108433-A1May 17, 2007Samsung Electronics Co., Ltd.Semiconductor memory device and method of fabricating the same
    US-7402851-B2July 22, 2008Samsung Electronics Co., Ltd.Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
    US-2008169457-A1July 17, 2008Samsung Electronics Co., Ltd.Phase changeable memory devices including nitrogen and/or silicon
    US-7476917-B2January 13, 2009Samsung Electronics Co., Ltd.Phase-changeable memory devices including nitrogen and/or silicon dopants
    US-8110429-B2February 07, 2012Macronix International Co., Ltd.Bridge resistance random access memory device and method with a singular contact structure
    US-2010320432-A1December 23, 2010Fabio Pellizzer, Agostino PirovanoVertical mosfet transistor, in particular operating as a selector in nonvolatile memory devices
    US-8987700-B2March 24, 2015Macronix International Co., Ltd.Thermally confined electrode for programmable resistance memory
    US-7164147-B2January 16, 2007Samsung Electronics Co., Ltd.Semiconductor memory device and method of fabricating the same
    US-2007051936-A1March 08, 2007Stmicroelectronics S.R.I.Phase change memory cell with tubular heater and manufacturing method thereof
    CN-100514663-CJuly 15, 2009财团法人工业技术研究院Semiconductor storage element, phase-change storage element and method for fabrication thereof
    US-2009194758-A1August 06, 2009Macronix International Co., Ltd.Heating center pcram structure and methods for making
    US-9336879-B2May 10, 2016Macronix International Co., Ltd.Multiple phase change materials in an integrated circuit for system on a chip application
    US-9214351-B2December 15, 2015Macronix International Co., Ltd.Memory architecture of thin film 3D array
    US-2007267721-A1November 22, 2007Samsung Electronics Co., Ltd.Phase Change Memory Cell Employing a GeBiTe Layer as a Phase Change Material Layer, Phase Change Memory Device Including the Same, Electronic System Including the Same and Method of Fabricating the Same
    US-2009275198-A1November 05, 2009Smuruthi Kamepalli, Tyler LowreyVapor Phase Methods for Forming Electrodes in Phase Change Memory Devices
    US-8237140-B2August 07, 2012Macronix International Co., Ltd.Self-aligned, embedded phase change RAM
    US-7687794-B2March 30, 2010Taiwan Semiconductor Manufacturing Co., Ltd.Method and structure for uniform contact area between heater and phase change material in PCRAM device
    US-8138028-B2March 20, 2012Macronix International Co., Ltd, International Business Machines Corporation, Qimonda North America Corp.Method for manufacturing a phase change memory device with pillar bottom electrode
    WO-2008033203-A1March 20, 2008Ovonyx, Inc.Chalcogenide semiconductor memory device with insulating dielectric
    US-8860111-B2October 14, 2014Macronix International Co., Ltd., International Business Machines CorporationPhase change memory cell array with self-converged bottom electrode and method for manufacturing
    US-7558100-B2July 07, 2009Samsung Electronics Co., Ltd.Phase change memory devices including memory cells having different phase change materials and related methods and systems
    US-2008068879-A1March 20, 2008Samsung Electronics Co., Ltd.Phase change memory devices including memory cells having different phase change materials and related methods and systems
    US-2004234895-A1November 25, 2004Lee Jung-Hyun, Park Young-Soo, Lee Won-TaeSemiconductor memory device and method of fabricating the same